Customized Filter Cube in Fluorescence Microscope Measurements of InGaN/GaN Quantum-Well Characterization
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概要
- 論文の詳細を見る
Modified optical filter elements were fabricated to access blue and violet spectral ranges of InGaN/GaN light-emitting diodes (LEDs) in characterizing luminescence via a fluorescence microscope. As band gap energies of GaN and InGaN layers were close, it was not trivial to separate excitation and luminescence light, which caused slight detection of excitation light. Nevertheless, the results obtained on $c$- and $m$-plane LEDs were compared with our previous work, leading consistent understanding of luminescence characteristics in terms of the quantum-confined Stark effect.
- 2009-09-25
著者
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NAKAMURA Shuji
Solid State Lighting and Energy Center, Materials Department, University of California
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CHAKRABORTY Arpan
Solid State Lighting and Display Center, University of California
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Masui Hisashi
Solid State Lighting And Energy Center Materials Department University Of California
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Yamada Hisashi
Present Address : College Of Agriculture Ehime University
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DenBaars Steven
Solid State Lighting and Display Center, University of California, Santa Barbara, CA 93106, U.S.A.
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Masui Hisashi
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106-5055, U.S.A.
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Koslow Ingrid
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106-5055, U.S.A.
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Sonoda Junichi
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106-5055, U.S.A.
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Iso Kenji
Present address
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Pfaff Nathan
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106-5055, U.S.A.
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Iso Kenji
Present address: Japan Pionics Co., Ltd., Hiratsuka, Kanagawa 254-0013, Japan
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Chakraborty Arpan
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106-5055, U.S.A.
関連論文
- Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures
- Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
- Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
- Customized Filter Cube in Fluorescence Microscope Measurements of InGaN/GaN Quantum-Well Characterization
- Erratum: “Increased Polarization Ratio on Semipolar ($11\bar{2}2$) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition”
- みつ症抵抗性品種'つがる'における収穫前の高果実温によって誘導されたみつ症
- Continuous-wave Operation of AlGaN-cladding-free Nonpolar $m$-Plane InGaN/GaN Laser Diodes
- Increased Polarization Ratio on Semipolar ($11\bar{2}2$) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition