Hydrogenation Effects on the Hot-Carrier Endurance of Metal Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin Film Transistors
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概要
- 論文の詳細を見る
Hydrogenation effects on the performance and hot-carrier (HC) stability of n-type metal induced laterally crystallized (MILC) polycrystalline silicon thin-film transistors (TFTs) are systematically investigated using statistics. It is demonstrated for the first time that plasma hydrogenation not only largely improves device performance before stress, but also significantly enhances its HC endurance and tightens the distribution of its degradation data. The improvement of HC reliability is attributed to the reduced Si–H bond breaking mechanism, and the suppression of impact ionization in hydrogenated MILC TFTs.
- 2008-05-25
著者
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Wong Man
Department Of Electrical And Computer Engineering University Of California
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Xu Meijuan
Department Of Clinical Pharmacology Affiliated Hospital Nanjing University Of Traditional Chinese Me
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Wong Man
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong
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Wang Mingxiang
Department of Microelectronics, Soochow University, Suzhou 215021, China
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Zhan Dongli
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong
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Xue Min
Department of Microelectronics, Soochow University, Suzhou 215021, China
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Xu Meijuan
Department of Microelectronics, Soochow University, Suzhou 215021, China
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