GaN-Based Vertical Cavities with All Dielectric Reflectors by Epitaxial Lateral Overgrowth

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概要

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• GaN-based vertical cavities with all dielectric top and bottom distributed Bragg reflectors (DBRs) on c-plane sapphire were investigated under optical injection and compared with those having AlN/GaN bottom and dielectric top DBRs on freestanding GaN. A novel fabrication method employing two epitaxial lateral overgrowth steps is introduced to produce a cavity on bottom dielectric DBRs without the need to remove the sapphire substrate. Under high optical excitation, the cavity with all dielectric DBRs exhibited quality factors up to 1400 and an order of magnitude lower stimulated emission threshold density (5 μJ/cm²) than those employing top dielectric DBRs but semiconductor AlN/GaN bottom DBRs on freestanding GaN. This novel approach is expected to lead to injection vertical cavity lasers with naturally formed nearly defect-free active regions and current confinement without any oxidation steps.

• 2013-08-25

著者

• Shimada Ryoko

  Department Of Mathematics And Physics Faculty Of Science Japan Women's University

• Christen Juergen

  Institute Of Experimental Physics Otto-von-guericke University

• Bertram Frank

  Institute Of Experimental Physics Otto-von-guericke University

• Zhang Fan

  Department Of Electronics And Informatics Faculty Of Engineering Toyama Prefectural University

• Bertram Frank

  Institute of Experimental Physics, Otto-von-Guericke University Magdeburg, D-39106 Magdeburg, Germany

• Franke Alexander

  Institute of Experimental Physics, Otto-von-Guericke University Magdeburg, D-39106 Magdeburg, Germany

• Okur Serdal

  Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, U.S.A.

• Hafiz Shopan

  Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, U.S.A.

• Lee Jaesoong

  Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, U.S.A.

• Avrutin Vitaliy

  Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, U.S.A.

• Morkoç Hadis

  Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, U.S.A.

• Özgür Ümit

  Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, U.S.A.

• Shimada Ryoko

  Department of Mathematical and Physical Sciences, Japan Women's University, Bunkyo, Tokyo 112-8681, Japan

• ZHANG Fan

  Department of Computer Science and Engineering, University of Connecticut

• Zhang Fan

  Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, U.S.A.

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