Correlated Band-Edge Emissions of ZnO Nanorods and GaN Underlying Substrate
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概要
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Vertically aligned ZnO nanorods were grown on GaN substrate with hydrothermal method. Under the excitation of continuous-wave ultraviolet laser, the band-edge emission of the ZnO nanorods exhibits a strong intensity fluctuation with time at low temperatures. More interestingly, it has a distinct correlation with the band-edge emission of the GaN underlying layer. The correlation coefficient is found to be as high as $-0.94$. The results reveal the presence of random and efficient carrier transfer between the ZnO nanorods and GaN underlying substrate.
- 2009-02-25
著者
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Zhang Fan
Department Of Electronics And Informatics Faculty Of Engineering Toyama Prefectural University
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XU Shijie
Department of Aerospace Engineering, School of Astronautics, Beihang University
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Xu Shijie
Department of Physics and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong, Pokfulam Road, Hong Kong, China
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Ning Jiqiang
Department of Physics and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong, Pokfulam Road, Hong Kong, China
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Wang Rongxin
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China
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Le Hongquang
Singapore-MIT Alliance, 4 Engineering Drive 3, National University of Singapore, Singapore 117576, Singapore
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Chua Soojin
Singapore-MIT Alliance, 4 Engineering Drive 3, National University of Singapore, Singapore 117576, Singapore
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ZHANG Fan
Department of Computer Science and Engineering, University of Connecticut
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