Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique
スポンサーリンク
概要
著者
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ZHU Jianjun
Institute of Semiconductors, Chinese Academy of Sciences
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SU Shichen
Department of Physics, The University of Hong Kong
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LING Chi-Chung
Department of Physics, The University of Hong Kong
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ZHAO Degang
Institute of Semiconductors, Chinese Academy of Sciences
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WANG Jiannong
Department of Physics, The Hong Kong University of Science and Technology
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GE Weikun
Department of Physics, The Hong Kong University of Science and Technology
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XU Shijie
Department of Aerospace Engineering, School of Astronautics, Beihang University
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YANG Hui
Institute of Semiconductors, Chinese Academy of Sciences
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Lu Liwn
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
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- Conduction Band Offset of InGaN/AllnGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique