m-plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching
スポンサーリンク
概要
著者
関連論文
- Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
- High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
- Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
- m-plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching
- Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
- Ohmic cathode electrode on the backside of m-plane and (2021) bulk GaN substrates for optical device applications
- m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
- Ohmic Cathode Electrode on the Backside of $m$-Plane and ($20\bar{2}1$) Bulk GaN Substrates for Optical Device Applications
- Electroluminescence Characterization of ($20\bar{2}1$) InGaN/GaN Light Emitting Diodes with Various Wavelengths
- Propagation of Spontaneous Emission in Birefringent $m$-Axis Oriented Semipolar ($11\bar{2}2$) (Al,In,Ga)N Waveguide Structures