Haskell Benjamin | Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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概要
- Haskell Benjamin A.の詳細を見る
- 同名の論文著者
- Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.の論文著者
関連著者
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Haskell Benjamin
Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Haskell Benjamin
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Nakamura Shuji
Materials Department University Of Cahfornia
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Wu Feng
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Haskell Benjamin
Materials Departments University Of California
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Wu Feng
Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.
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FINI Paul
Materiais and Electrical and Computer Engineering, University of Callfornia
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Nakamura Shuji
Materials Department University Of California
著作論文
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
- Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk $m$-Plane GaN Substrate
- Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
- Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown $a$-Plane GaN
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia