Fujito Kenji | Materials Department And Erato/jst Ucsb Group University Of California
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概要
関連著者
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Fujito Kenji
Materials Department And Erato/jst Ucsb Group University Of California
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Nakamura Shuji
Materials Department University Of California
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Fujito Kenji
Optoelectronics Laboratory Mitsubishi Chemical Corporation
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Speck James
Materials Department University Of California
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Speck J
Univ. California California Usa
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Speck James
Erato/jst Ucsb Group
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Speck James
Materials Department And Erato/jst Ucsb Group University Of California
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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FUJITO Kenji
Optoelectronics Laboratory, Mitsubishi Chemical Corporation
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Denbaars Steven
Jst-erato中村pj:ucsb
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Fujito Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan
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Denbaars Steven
Nicp/erato Jst Ucsb Group University Of California
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Nakamura Shuji
Materials Department University Of Cahfornia
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Denbaars Steven
Electrical And Computer Engineering Department University Of California
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OHTA Hiroaki
Materials Department, University of California
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DENBAARS Steven
Electrical and Computer Engineering Department, University of California
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DENBAARS Steven
Materials Department and Electrical Engineering Department, University of California
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Ohta Hiroaki
Materials Department University Of California
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DenBaars Steven
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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NAKAMURA Shuji
Electrical and Computer Engineering Department, University of California
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Denbaars Steven
Electrical And Computer Engineering And Materials Departments University Of California
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Nakamura Shuji
Electrical And Computer Engineering Department University Of California
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Saito Makoto
Materials Department University Of California
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DenBaars Steven
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Lin You-da
Electrical And Computer Engineering And Materials Departments University Of California
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SAITO Makoto
Materials Department and Electrical Engineering Department, University of California
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HSU Po
Materials Department, University of California
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Hsu Po
Materials Department University Of California
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Kelchner Kathryn
Department Of Electrical And Computer Engineering University Of California
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Saito Makoto
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Fujino Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation
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Hardy Matthew
Univ. California Ca Usa
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Hardy Matthew
Materials Department University Of California
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Tyagi Anurag
Solid State Lighting And Energy Center Materials Department University Of California
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Tyagi Anurag
Electrical And Computer Engineering And Materials Departments University Of California
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KELCHNER Kathryn
Electrical and Computer Engineering Department, University of California
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HAEGER Daniel
Materials Department, University of California
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FARRELL Robert
Electrical and Computer Engineering Department, University of California
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Huang Chia
Materials Department University Of California
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Haeger Daniel
Materials Department University Of California
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Farrell Robert
Department Of Electrical And Computer Engineering University Of California
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Wu Feng
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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HUANG Chia-Yen
Materials Department, University of California
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WU Feng
Materials Department, University of California
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ASAMIZU Hirokuni
Materials Department and Electrical Engineering Department, University of California
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Cohen Daniel
Materials Department University Of California
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Wu Feng
Materials Department University Of California
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Cohen Daniel
Department Of Electrical And Computer Engineering University Of California
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浅水 啓州
Materials Department University Of California
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Wu F
米国
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Hashimoto Tadao
Materials Department And Erato/jst Ucsb Group University Of California
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Feng Wu
Division Of Quantum Energy Engineering Graduate School Of Engineering Hokkaido University
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CHAKRABORTY Arpan
Materials Department, University of California
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Koinuma Hideomi
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Koinuma Hideomi
Department Of Industrial Chemistry Faculty Of Engineering University Of Tokyo
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Koinuma Hideomi
Department Of Industrial Chemistry University Of Tokyo
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GONG Jianping
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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Denbaars Steven
Materials Department University Of California
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FINI Paul
Materiais and Electrical and Computer Engineering, University of Callfornia
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Gong J
Hokkaido Univ. Sapporo Jpn
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Kikuchi Hiromi
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Kawasaki Masashi
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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Chakraborty Arpan
Materials Department University Of California
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HASHIMOTO Tadao
Materials Department and ERATO/JST UCSB group, University of California
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Yoshimoto M
Kyoto Inst. Technol. Kyoto Jpn
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Yoshimoto Mamoru
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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FUJITO Kenji
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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SPECK J.
Materials Department, University of California, Santa Barbara
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Haskell Benjamin
Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Koinuma Hideomi
National Institute for Materials Science (NIMS)
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Haskell Benjamin
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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FUJITO Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation
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YAMAMOTO Shuichiro
Materials Department, University of California
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HSIUNG Chia-Lin
Electrical and Computer Engineering Department, University of California
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SATO Hitoshi
Materials Department and Electrical Engineering Department, University of California
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HIRASAWA Hirohiko
Materials Department and Electrical Engineering Department, University of California
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FELLOWS Natalie
Materials Department and Electrical Engineering Department, University of California
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TYAGI Anurag
Materials Department and Electrical Engineering Department, University of California
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KELCHNER Kathryn
Department of Electrical and Computer Engineering, University of California
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LIN You-Da
Department of Electrical and Computer Engineering, University of California
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SAITO Makoto
Electron Microscopic Laboratory, University of Niigata
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Ishizawa Nobuo
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Baker Troy
Materials Department University Of California Santa Barbara
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Heying Benjamin
Solid State Lighting And Display Center University Of California
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HUANG Chia
Materials Department, University of California
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KUO Hsun
Electrical and Computer Engineering Department, University of California
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COHEN Daniel
Electrical and Computer Engineering and Materials Departments, University of California
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SPECK James
Electrical and Computer Engineering and Materials Departments, University of California
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Fellows Natalie
Solid State Lighting And Energy Center Materials Department University Of California
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KUMAGAI Masao
Material Characterization Laboratory, Kanagawa High-Technology Foundation, Kanagawa Science Park
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HIRAI Kiyoto
Material Characterization Laboratory, Kanagawa High-Technology Foundation, Kanagawa Science Park
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HORIGUCHI Kenichi
Material Characterization Laboratory, Kanagawa High-Technology Foundation, Kanagawa Science Park
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KAMBER Derrick
Materials Department, University of California Santa Barbara
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HASKELL Benjamin
Materials Departments, University of California
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Kyoto University
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Gao Yan
Materials Department University Of California
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Yamamoto Shuichiro
Materials Department University Of California
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Fini Paul
Materials Department And Erato/jst Ucsb Group University Of California
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Kuo Hsun
Electrical And Computer Engineering Department University Of California
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Heying B.
Solid State Lighting And Display Center University Of California
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Hu Evelyn
Materials Department University Of California
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Fujii Tetsuo
Nicp/erato Jst Ucsb Group University Of California
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Hirai K
Kanagawa High-technology Foundation
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Tsuchiya Ryuta
Ceramics Materials And Structures Laboratory Tokyo Institute Of Technology
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Kamber Derrick
Materials Department University Of California Santa Barbara
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Sonoda Junichi
Materials Department University Of California
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HOLDER Casey
Materials Department, University of California
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Haskell Benjamin
Materials Departments University Of California
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SHARMA Rajat
Materials Department, University of California
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FUJITO Kenji
NICP/ERATO JST, UCSB Group, University of California
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FUJITO Kenji
Mitsubishi Chemical Corporation
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FUJITO Kenji
Materials Department and ERATO/JST UCSB Group, University of California
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Holder Casey
Materials Department University Of California
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Sharma Rajat
Materials Department University Of California
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Zhao Yuji
Electrical And Computer Engineering Department University Of California
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PAN Chih-Chien
Materials Department, University of California
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BRINKLEY Stuart
Electrical and Computer Engineering Department, University of California
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KOSLOW Ingrid
Materials Department, University of California
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Pan Chih-chien
Materials Department University Of California
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Koslow Ingrid
Materials Department University Of California
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Brinkley Stuart
Electrical And Computer Engineering Department University Of California
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Hirasawa Hirohiko
Materials Department And Electrical Engineering Department University Of California
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TANAKA Udai
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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TSUCHIYA Ryuta
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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Tanaka U
Univ. Tsukuba Ibaraki Jpn
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Sato Hitoshi
Materials Department And Electrical Engineering Department University Of California
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Wu Feng
Materials Department University Of California Santa Barbara
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Wu Feng
Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.
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Tyagi Anurag
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Yoshimoto Masahiro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Fujino Kenji
Materials Department and ERATO/JST UCSB Group, University of California
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Sato Hitoshi
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Fini Paul
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Fujito Kenji
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Speck James
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Hashimoto Tadao
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
著作論文
- High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
- Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
- High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
- Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
- Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
- Plane Dependent Growth of GaN in Supercritical Basic Ammonia
- Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
- Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
- Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
- AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
- InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates
- m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
- 30-mW-Class High-Power and High-Efficiency Blue Semipolar (1011) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
- Heteroepitaxial Growth of c-Axis-Oriented BaTiO_3 Thin Films with an Atomically Smooth Surface
- Suppression of Precipitate Formation in Heteroepitaxial Growth of YBa_2Cu_3O_ Film on Misoriented SrTiO_3 Substrates
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia