Surface Hydrogen Effects on Ge Surface Segregation during Silicon Gas Source Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-04-30
著者
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JOYCE Bruce
Interdisciplinary Research Centre for Semiconductor Materials, Imperial College
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Xie Mao
Interdisciplinary Research Centre For Semiconductor Materials The Blackett Laboratory Imperial Colle
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Joyce Bruce
Interdisciplinary Research Centre For Semiconductor Materials Imperial College
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Joyce Bruce
Interdisciplinary Research Centre For Semiconductor Materials The Blackett Laboratory Imperial Colle
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OHTANI Noboru
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial Col
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MOKLER Scott
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial Col
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ZHANG Jing
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial Col
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Ohtani Noboru
Advanced Technology Research Laboratories Nippon Steel Corporation
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Mokler Scott
Interdisciplinary Research Centre For Semiconductor Materials The Blackett Laboratory Imperial Colle
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Zhang Jing
Interdisciplinary Research Centre For Semiconductor Materials The Blackett Laboratory Imperial Colle
関連論文
- Scanning Transmission Electron Microscopy (STEM) Study of InAs/GaAs Quantum Dots
- Mechanism of Molten KOH Etching of SiC Single Crystals : Comparative Study with Thermal Oxidation
- Influence of the Seed Face Polarity on the Sublimation Growth of α-SiC
- Photoluminescence from High r-Electron Subbands and Intersubband Electroluminescence Using X-ΓCarrier Injection in a Simple GaAs/AlAs Superlattice
- Observation of the Infrared Emission from Simply Periodical GaAs/AlAs Superlattices
- Surface Hydrogen Effects on Ge Surface Segregation during Silicon Gas Source Molecular Beam Epitaxy
- Influence of Γ-X Resonance on Photocurrent-Voltage Characteristics in GaAs/InAlAs Strained Superlattices
- Influence of Γ-X Resonance on Current-Voltage Characteristics in GaAs/InAlAs Strained Superlattices
- Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-I Superlattices
- Electroluminescence in Undoped GaAs/AlAs Superlattice due to Avalanche Breakdown
- Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC
- Photocurrent and Photoluminescence Affected by Γ-X Electron Transfer in Type-I GaAs/AlAs Superlattices
- Photocurrent and Photoluminescence Affected by Γ-X Electron Transfer in Type-I GaAs/AlAs Superlattices
- Formation Process of High-Field Domain in Superlattices Observed by Photoluminescence Spectra Branch
- Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors
- Behavior of Basal Plane Dislocations in Hexagonal Silicon Carbide Single Crystals Grown by Physical Vapor Transport
- Nitrogen Incorporation Mechanism and Dependence of Site-Competition Epitaxy on the Total Gas Flow Rate for 6H-SiC Epitaxial Layers Grown by Chemical Vapor Deposition
- Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors