Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC
スポンサーリンク
概要
- 論文の詳細を見る
Nitrogen incorporation kinetics during the sublimation boule growth of SiC have been studied in terms of several growth parameters. 6H and 4H SiC crystals were heavily doped with nitrogen as a donor. It was found that the growth rate has little influence on the doping concentration, indicating that nitrogen incorporation is not kinetically limited at normal growth rates in the sublimation growth. On the other hand, surface polarity and polytype were found to influence the nitrogen incorporation kinetics at the growth front. By optimizing the growth conditions, bulk resistivities as low as 7.6×10^<-3> Ωcm and 5.3×10^<-3> Ωcm were obtained for 6H and 4H SiC, respectively.
- 社団法人応用物理学会の論文
- 1996-04-15
著者
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Katsuno Masakazu
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Ohtani Noboru
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Yashiro Hirokatsu
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Kanaya Masatoshi
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Onoue K
Advanced Technology Research Laboratories Nippon Steel Corporation
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Nishikawa T
Kyoto Univ. Kyoto Jpn
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ONOUE Kozo
Advanced Technology Research Laboratories, Nippon Steel Corporation
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NISHIKAWA Takeshi
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Ohtani Noboru
Advanced Technology Research Laboratories Nippon Steel Corporation
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Kanaya M
Ion Engineering Res. Inst. Corp. Osaka Jpn
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Yashiro Hirokatsu
Advanced Technology Research Laboratories Nippon Steel Corporation
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