Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals
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概要
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4H-SiC single crystals were grown by the physical vapor transport (PVT) growth method under different thermoelastic stress conditions, and the degree of basal plane bending in the crystals was characterized by the peak shift measurement of X-ray rocking curves. The results indicate that the degree of basal plane bending largely depends on the magnitude of the thermoelastic stresses imposed on the crystals during PVT growth. Quantitative analysis of basal plane bending revealed that the density of basal plane dislocations (BPDs) estimated from basal plane bending is much smaller than that obtained from defect-selective etching. It was also found that the BPD density is correlated with the threading screw dislocation (TSD) density in PVT-grown SiC crystals. These aspects of BPDs were discussed in terms of the BPD multiplication process triggered by the intersection of BPDs with a forest of TSDs extending along the $c$-axis.
- 2009-06-25
著者
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Aigo Takashi
Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation
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Ohashi Wataru
Advanced Technology Research Laboratories Nippon Steel Corporation
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Katsuno Masakazu
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Fujimoto Tatsuo
Advanced Technology Research Laboratories Nippon Steel Corporation
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Yashiro Hirokatsu
Advanced Technology Research Laboratories Nippon Steel Corporation
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Nakabayashi Masashi
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Ohtani Noboru
Kwansei Gakuin University, Research and Development Center for SiC Materials and Processes, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan
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Tsuge Hiroshi
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Hirano Hosei
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Hoshino Taizo
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Ohashi Wataru
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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