Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs-Si Interface
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概要
- 論文の詳細を見る
We report on the improvement in the microwave performance of metal-semiconductor field effect transistors (MESFETs) fabricated on GaAs/Si with a resistive layer at the GaAs-Si interface. This layer was obtained by using a p-type AlGaAs layer or an oxygen-doped AlGaAs layer grown by metal-organic chemical vapor deposition (MOCVD). Correlation between sheet carrier concentration in the resistive layer and the device performance was studied and a marked improvement was found by reducing the number of carriers in the layer to 4.1×10^<12>cm^<-2>, which was about 1/5 of that for standard GaAs/Si. High cutoff frequency of 22 GHz, comparable to that of MESFETs/GaAs, was obtained for 0.8-μm-gate-length MESFETs/Si with a sheet carrier concentration of 1.5×10^<12>cm^<-2>. On evaluating scattering parameters for improved MESFETs/Si, it was found that the parasitic pad capacitance, characteristic for standard GaAs/Si, became as small as that for MESFETs/GaAs. These results demonstrate that GaAs/Si with a resistive layer is applicable to GaAs electronic devices.
- 社団法人応用物理学会の論文
- 1999-05-15
著者
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TACHIKAWA Akiyoshi
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Aigo Takashi
Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation
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Ohta Yasumitsu
Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation
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FUJITA Yasuhisa
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Fujita Yasuhisa
Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation
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Tachikawa Akiyoshi
Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation
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