Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
6H-SiC metal-semiconductor field-effect transistors (MESFETs) were fabricated on epitaxial layers grown on (0001) Si faces by chemical vapor deposition and the influence of screw dislocations in the epitaxial layers on the DC characteristics of the MESFETs was studied. The fabricated MESFETs with a gate length of 1 $\mu$m indicated the maximum transconductance of 30–35 mS/mm for the drain-source saturation current of 30–40 mA/mm. The evaluation of small-signal RF characteristics revealed the cutoff frequency of 2.7 GHz and the maximum operation frequency of 6.8 GHz. DC characteristics of the MESFETs with the screw dislocation in the device channel region were compared to those of MESFETs without the dislocation. From the comparison, it was demonstrated for the first time that the drain-source current–voltage characteristics for the MESFETs were negligibly affected by the screw dislocation although it caused some degradation of the gate Schottky characteristics.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2002-05-15
著者
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Aigo Takashi
Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation
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Katsuno Masakazu
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Ohtani Noboru
Advanced Technology Research Laboratories Nippon Steel Corporation
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Fujimoto Tatsuo
Advanced Technology Research Laboratories Nippon Steel Corporation
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Yashiro Hirokatsu
Advanced Technology Research Laboratories Nippon Steel Corporation
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