Reliability of GaAs Metal-Semiconductor Field Effect Transistors Grown on Si Substrates
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概要
- 論文の詳細を見る
We report on the reliability of metal-semiconductor field effect transistors (MESFETs) fabricated on GaAs/Si compared to that of MESFETs on GaAs/GaAs, based on the results of the high-temperature storage test under dc bias. The failure mode was the non-pinch-off phenomenon with the increase in drain current for both types of MESFETs. From the results of observation using a scanning electron microscope and Auger electron analysis, gate metal dispersion and the possibility of a reaction between the metal and the GaAs channel were revealed for the failed devices. The mean time to failure for the MESFETs/Si at a channel temperature of 130°C was predicted to be 1.28×106 h from the storage test, which was almost equal to that for MESFETs/GaAs. This result indicates that the lifetime of MESFETs/Si is comparable to that of MESFETs/GaAs, and the high density of dislocations in the GaAs/Si does not affect the reliability of the devices.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-06-15
著者
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Takayama Seiji
Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation
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Aigo Takashi
Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation
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Tachikawa Akiyoshi
Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation
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Moritani Akihiro
Advanced Semiconductor Materials and Devices Laboratories,
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Yabe Aiji
Advanced Semiconductor Materials and Devices Laboratories,
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Takayama Seiji
Advanced Semiconductor Materials and Devices Laboratories,
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Aigo Takashi
Advanced Semiconductor Materials and Devices Laboratories,
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Tachikawa Akiyoshi
Advanced Semiconductor Materials and Devices Laboratories,
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