Electroluminescence in Undoped GaAs/AlAs Superlattice due to Avalanche Breakdown
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概要
- 論文の詳細を見る
We have observed electroluminescence (EL) in an undoped GaAs/AlAs superlattice (SL) originating from avalanche breakdown. From EL and photocurrent-voltage characteristics, we found that a large number of electrons were injected into Γ2 states in the SL by avalanche breakdown under a high electric field. The EL spectra revealed two peaks : one having a longer wavelength originated from the radiative recombination process between Γ1 and hh1 states, while the other peak originated from the recombination between Γ2 and hh1 states.
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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Vaccaro Pablo
Atr Adaptive Communications Research Laboratories
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Vaccaro Pablo
Atr Optical And Radio Communications Research Laboratories
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Vaccaro P
Atr Adaptive Communications Research Laboratories
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Egami Norifumi
Materials Science & Advanced Devices Nhk Science & Technical Research Laboratories
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Egami N
Atr Adaptive Communications Res. Lab.
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DOMOTO Chiaki
ATR Adaptive Communications Research Laboratories
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OHTANI Naoki
ATR Adaptive Communications Research Laboratories
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KUROYANAGI Kazuyoshi
ATR Adaptive Communications Research Laboratories
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EGAMI Norifumi
ATR Adaptive Communications Research Laboratories
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Ohtani Noboru
Advanced Technology Research Laboratories Nippon Steel Corporation
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