Katsuno Masakazu | Advanced Technology Research Laboratories, Nippon Steel Corporation
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概要
- Katsuno Masakazuの詳細を見る
- 同名の論文著者
- Advanced Technology Research Laboratories, Nippon Steel Corporationの論文著者
関連著者
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Katsuno Masakazu
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Ohtani Noboru
Advanced Technology Research Laboratories Nippon Steel Corporation
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Yashiro Hirokatsu
Advanced Technology Research Laboratories Nippon Steel Corporation
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Aigo Takashi
Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation
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Kanaya Masatoshi
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Fujimoto Tatsuo
Advanced Technology Research Laboratories Nippon Steel Corporation
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Kanaya M
Ion Engineering Res. Inst. Corp. Osaka Jpn
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Ohtani Noboru
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Yashiro Hirokatsu
Advanced Technology Research Laboratories, Nippon Steel Corporation
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TAKAHASHI Jun
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Takahashi J
Advanced Technology Research Laboratories Nippon Steel Corporation
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TAKAHASHI Jun
Fujitsu Kansai-Chubu Net-Tech Limited
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Takahashi J
Fujitsu Kansai-chubu Net-tech Limited
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Nakabayashi Masashi
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Tsuge Hiroshi
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Hoshino Taizo
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Ohashi Wataru
Advanced Technology Research Laboratories Nippon Steel Corporation
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Onoue K
Advanced Technology Research Laboratories Nippon Steel Corporation
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Nishikawa T
Kyoto Univ. Kyoto Jpn
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ONOUE Kozo
Advanced Technology Research Laboratories, Nippon Steel Corporation
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NISHIKAWA Takeshi
Advanced Technology Research Laboratories, Nippon Steel Corporation
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FUJIMOTO Tatsuo
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Aigo Takashi
Advanced Technology Research Laboratories Nippon Steel Corporation
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Yashiro Hirokatsu
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Kanaya Masatoshi
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Ohtani Noboru
Kwansei Gakuin University, Research and Development Center for SiC Materials and Processes, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan
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Ohtani Noboru
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Hirano Hosei
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Aigo Takashi
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Ohashi Wataru
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Sawamura Mitsuru
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
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Fujimoto Tatsuo
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
著作論文
- Mechanism of Molten KOH Etching of SiC Single Crystals : Comparative Study with Thermal Oxidation
- Influence of the Seed Face Polarity on the Sublimation Growth of α-SiC
- Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC
- Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals
- Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors
- Behavior of Basal Plane Dislocations in Hexagonal Silicon Carbide Single Crystals Grown by Physical Vapor Transport
- Nitrogen Incorporation Mechanism and Dependence of Site-Competition Epitaxy on the Total Gas Flow Rate for 6H-SiC Epitaxial Layers Grown by Chemical Vapor Deposition
- Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors