Kanaya Masatoshi | Advanced Technology Research Laboratories, Nippon Steel Corporation
スポンサーリンク
概要
関連著者
-
Katsuno Masakazu
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
Kanaya Masatoshi
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
Ohtani Noboru
Advanced Technology Research Laboratories Nippon Steel Corporation
-
Ohtani Noboru
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
Kanaya M
Ion Engineering Res. Inst. Corp. Osaka Jpn
-
Yashiro Hirokatsu
Advanced Technology Research Laboratories Nippon Steel Corporation
-
TAKAHASHI Jun
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
Takahashi J
Advanced Technology Research Laboratories Nippon Steel Corporation
-
Yashiro Hirokatsu
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
TAKAHASHI Jun
Fujitsu Kansai-Chubu Net-Tech Limited
-
Takahashi J
Fujitsu Kansai-chubu Net-tech Limited
-
Aigo Takashi
Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation
-
Onoue K
Advanced Technology Research Laboratories Nippon Steel Corporation
-
Nishikawa T
Kyoto Univ. Kyoto Jpn
-
ONOUE Kozo
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
NISHIKAWA Takeshi
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
Yashiro Hirokatsu
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
-
Kanaya Masatoshi
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
-
Ohtani Noboru
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
-
Aigo Takashi
Advanced Technology Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
著作論文
- Mechanism of Molten KOH Etching of SiC Single Crystals : Comparative Study with Thermal Oxidation
- Influence of the Seed Face Polarity on the Sublimation Growth of α-SiC
- Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC
- Nitrogen Incorporation Mechanism and Dependence of Site-Competition Epitaxy on the Total Gas Flow Rate for 6H-SiC Epitaxial Layers Grown by Chemical Vapor Deposition