Electrical and optical properties of high-density lateral junction light-emitting diodes array
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概要
- 論文の詳細を見る
GaAs/Al_xGa_<1-x>As epi-layers were grown on the GaAs (311) A patterned substrate with amphoteric silicon as a dopant. High-density, 2400 dots per inch, LED arrays were fabricated using lateral junction with device pitch of 10.6 micron. Electrical and optical properties of the LEDs were measured at room temperature. The light emission spectrum shows a single peak at a wavelength of 813 nm with FWHM of 56 nm. The light output power of a single LED was 1μW for the injection current of 2 mA.
- 社団法人電子情報通信学会の論文
- 2004-08-20
著者
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Saito Nobuo
Department Of Photonics Atr Wave Engineering Laboratories
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DHARMARASU Nethaji
Department of Photonics, ATR Wave Engineering Laboratories
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SARAVANAN Shanmugam
Department of Photonics, ATR Wave Engineering Laboratories
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KUBOTA Kazuyoshi
Department of Photonics, ATR Wave Engineering Laboratories
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VACCARO Pable
Department of Photonics, ATR Wave Engineering Laboratories
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ZANARDIOCAMPO J.
Department of Photonics, ATR Wave Engineering Laboratories
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Saravanan S
Department Of Photonics Atr Wave Engineering Laboratories
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Vaccaro P
Department Of Photonics Atr Wave Engineering Laboratories
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Vaccaro Pablo
Department Of Electrical Engineering Kyoto University
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Kubota Kazuyoshi
Department Of Photonics Atr Wave Engineering Laboratories
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Kubota Kazuyoshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University:central Research Labora
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Kubota Kazuyoshi
Atr Adaptive Communications Research Labs.
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Zanardiocampo J.
Department Of Photonics Atr Wave Engineering Laboratories
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Dharmarasu Nethaji
Department Of Photonics Atr Wave Engineering Laboratories
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Saravanan Shanmugam
Atr Adaptive Communications Research Labs.
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Saravanan Shanmugam
Department Of Nonlinear Science Atr Wave Engineering Laboratories
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Vaccaro Pable
Department Of Photonics Atr Wave Engineering Laboratories
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Voccaro Pablo
Atr Adaptive Communications Research Laboratories
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SAITO Nobuo
Department of Chemistry, Graduate School of Science, The University of Tokyo
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Saito Nobuo
Department of Chemistry, Faculty of Science, The University of Tokyo
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