High-density light-emitting diodes using a lateral p-n junction on patterned (311)A GaAs substrates
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概要
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We report the high-density light-emitting diode (LED) array using a lateral p-n junction. AlxGa1-xAs lateral p-n junctions were formed on a semi-insulating GaAs (311)A patterned substrate using the amphoteric nature of silicon that behaves as p- and n-type dopant. For the first time, 2400 dots-per-inch (dpi) LED arrays were fabricated using the lateral junction. Electroluminescence spectrum shows a single peak at a wavelength of 813nm with an FWHM of 56nm at room temperature. The light output power was measured as a function of forward injection current. The high-density LED array has potential application in LED printers and displays.
- The Institute of Electronics, Information and Communication Engineersの論文
著者
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OCAMPO J.
Department of Photonics, ATR Wave Engineering Laboratories
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Ocampo J.
Department Of Photonics Atr Wave Engineering Laboratories
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KUBOTA K.
Department of Surgical Pathology, Hokkaido University Hospital
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Saito N.
Department of Chemistry, University of Oregon
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Saravanan S.
Department of Photonics, ATR Wave Engineering Laboratories
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Dharmarasu N.
Department of Photonics, ATR Wave Engineering Laboratories
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Vaccaro P.
Department of Photonics, ATR Wave Engineering Laboratories
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- High-density light-emitting diodes using a lateral p-n junction on patterned (311)A GaAs substrates