Effect of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC on Reverse Current–Voltage Characteristics of Schottky Barrier Diodes
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概要
- 論文の詳細を見る
Schottky barrier diodes are fabricated using high-purity semi-insulating 4H-SiC. Under certain measurement conditions, the reverse current–voltage ($I_{\text{R}}$–$V$) characteristics of the diodes exhibit a peak, with the diodes appearing to behave as negative resistance diodes. To investigate the effect of intrinsic defects in the 4H-SiC on the $I_{\text{R}}$–$V$ characteristics, the transient reverse currents of the diodes are measured. Without any assumptions regarding defects, a graphical peak analysis method, discharge current transient spectroscopy (DCTS), which uses the isothermal transient reverse current, can determine the densities and emission rates of defects. From simulation of the $I_{\text{R}}$–$V$ characteristics using the densities and emission rates of intrinsic defects determined by DCTS, the effect of the intrinsic defects in high-purity semi-insulating 4H-SiC on the $I_{\text{R}}$–$V$ characteristics of its Schottky barrier diodes is elucidated. It is found that DCTS is suitable for determining the densities and emission rates of electrically active defects in semi-insulating semiconductors.
- 2009-05-25
著者
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Takahashi Miyuki
Department Of Biochemistry And Cell Biology National Institute Of Health
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Miyake Takayuki
Department Of Cardiology Sekishinkai Sayama Hospital
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Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Kagawa Yoshitaka
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
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Tano Shoichi
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
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Miyake Takayuki
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
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Takahashi Miyuki
Department of Applied Science, Faculty of Technology, Tokyo Denki University
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