A Simple Graphic Method for Evaluating Densities and Energy Levels of Impurities in Semiconductor from Temperature Dependence of Majority-Carrier Concentration
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概要
- 論文の詳細を見る
A simple graphic method for impurity-level analysis of semiconductors is proposed. Because the concentration of majority carriers emitted from each impurity level increases monotonically with an increase of temperature (T), the product of 1/T and the total majority-carrier concentration has several peaks, and each peak results from the corresponding impurity level, Thus, from each peak value and the corresponding temperature, the density and energy level can be evaluated.
- 社団法人応用物理学会の論文
- 1996-05-01
著者
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Sonoi Kazuhide
Department Of Electronics Osaka Electro-communication University
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Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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