Annealing Behavior of Donorlike Defects Induced by High-Fluence Irradiation of High-Energy Particles in p-Type Silicon
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概要
- 論文の詳細を見る
The high-fluence irradiation of high-energy electrons or protons converts p-type conduction of B-doped Si into n-type conduction. This type conversion results from the formation of donorlike defects. Since the donorlike defects are completely annealed out at 523 K, one of the possible origins of the donorlike defects is a complex of interstitial B and interstitial O. On the other hand, the hole concentration is reduced by irradiation less than by the fluence with which the type conversion occurs. Although this reduction is reported to arise from the creation of hole traps annealed out at ${>}523$ K, it is found that some of the defects can be annealed out at low temperatures similar to the anneal-out temperature of donorlike defects.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-08-15
著者
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Matsuda Sumio
National Space Development Agency Of Japan
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Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Ishida Takuya
Department Of Biomaterial Sciences Graduate School Of Agricultural And Life Sciences The University Of Tokyo
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Ishida Takuya
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
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Kirihataya Taishi
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
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Anzawa Osamu
National Space Development Agency of Japan, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
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