Characterization of Intrinsic Defects in High-Purity High-Resistivity p-Type 6H-SiC
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概要
- 論文の詳細を見る
The densities, cross sections, and energy levels of intrinsic defects in high-purity high-resistivity (approximately $10^{6}$ $\Omega$ cm) p-type 6H-SiC are determined using isothermal capacitance transient spectroscopy (ICTS). Five intrinsic defects are detected ranging from 0.76 to 1.35 eV above the valence band. Since the sum of the densities of intrinsic defects detected is the same order of magnitude as the acceptor density in the p-type 6H-SiC, the intrinsic defects are found to decrease the majority-carrier concentration making its resistivity as high as approximately $10^{6}$ $\Omega$ cm.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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Takahashi Miyuki
Department Of Biochemistry And Cell Biology National Institute Of Health
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Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Takahashi Miyuki
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
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Yanase Hirokazu
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
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Takahashi Miyuki
Department of Applied Science, Faculty of Technology, Tokyo Denki University
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