Difference between Traps Determined from Transient Capacitance and Transient Reverse Current
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概要
- 論文の詳細を見る
The densities and energy levels of traps in silicon pin diodes are determined using the transient capacitance method(ICTS: isothermal capacitance transient spectroscopy)as well as the transient reverse current method(DCTS: discharge current transient spectroscopy). The traps determined by ICTS are located in the i layer(i. e. , the n^- region)and affect the steady-state reverse current(i. e. , a generation current). Conversely, the traps determined by DCTS are probably located at the surface of the substrate.
- 社団法人応用物理学会の論文
- 2000-05-15
著者
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Segawa Kazushige
Department Of Electronics Osaka Electro-communication University
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Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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EBISUI Tatsuya
Department of Electronics, Osaka Electro-Communication University
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Ebisui T
Tokushima Univ. Tokushima Jpn
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