Accurate Determination of Density and Energy Level of B Acceptor in Diamond from Temperature Dependence of Hole Concentration

概要

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The density ($N_{\text{A}}$) and energy level ($E_{\text{A}}$) of a B acceptor in B-doped p-type diamond epilayers are usually determined from the temperature dependence of hole concentration, $ p(T)$, using the Fermi–Dirac distribution function for acceptors, which does not consider the effect of the excited states of the B acceptor. However, in samples whose Fermi levels, $E_{\text{F}}(T)$, are located between the valence band maximum ($E_{\text{V}}$) and $E_{\text{A}}$ in a measurement temperature range, the obtained $N_{\text{A}}$ is much higher than the concentration of B atoms determined by secondary ion mass spectroscopy. Because the B acceptor level in diamond is deep, the effect of the excited states of the B acceptor on $ p(T)$ should not be ignored. When $E_{\text{F}}(T)$ is between $E_{\text{V}}$ and $E_{\text{A}}$, the reasonable $N_{\text{A}}$ and $E_{\text{A}}$ are obtained by fitting a curve to $ p(T)$ using the distribution function including the effect of its excited states.
2006-08-15