Low-Temperature Fluorination of GaAs Surface by CF_4 Plasma
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概要
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The GaAs surface was fluorinated at low temperatures in CF_4 plasma. The constitution and the composition of the formed films as functions of the substrate temperature and exposure time were analyzed by X-ray photoelectron spectroscopy. The fluoride films whose thickness increased with the substrate temperature consisted of gallium oxyfluoride and free As. We have also examined the influence of the surface treatment of GaAs substrates as well as the capping layer on the fluoride films. The sulfur treatment delayed the initiation of fluorination, and a-Si:H capping layer prevented free As from evaporating out.
- 社団法人応用物理学会の論文
- 1991-07-15
著者
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Kaibe H
Research Center Komatsu Ltd.
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Kaibe Hiromasa
Department Of Electrical Engineering Tokyo Metropolitan University
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Okumura Tsugunori
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Okumura Tsugunori
Department Of Electrical Engineering Tokyo Metropolitan University
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Iida Masahiro
Department Of Electrical Engineering Tokyo Metropolitan University
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