Deep-Trap Stress Induced Leakage Current Model for Nominal and Weak Oxides
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概要
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We have developed a model of the stress-induced leakage current (SILC) based on the inelastic trap-assisted tunneling (ITAT) by introducing a trap with a deep energy level of 3.6 eV from the bottom of the conduction band. This model can explain both of two field dependencies, i.e., a field dependence of the direct tunneling (DT) for A-mode SILC and that of the Fowler–Nordheim (FN) tunneling for B-mode SILC by analytical equations of a common form. For simple analytical equations, we introduce the most favorable trap position ($\mathit{MFTP}$), which gives the largest contribution to the leakage current. The trap area density for A-mode SILC of around $1\times 10^{10}$ cm-2 and the area density of the leakage paths for B-mode SILC of $1\times 10^{2}$ cm-2 were obtained by comparisons between the experimental results and the present model.
- 2008-08-25
著者
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Hu Chenming
Department Of Electrical Engineering & Computer Sciences University Of California
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Okumura Tsugunori
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Hu Chenming
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, U.S.A.
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Kamohara Shiro
Yield Management Department, Process Technology Development Division, Renesas Technology Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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