PbSnTe系化合物半導体溶製材料および焼結材料の熱電特性

スポンサーリンク

概要

• 論文の詳細を見る
• 1996-03-15

著者

• Yoneda Seiji

  Kanagawa University

• Nishida I

  Salesian Polytechnic

• YONEDA Seiji

  Department of Electronics and Information Engineering, Tokyo Metropolitan University

• KAIBE Hiromasa

  Department of Electronics and Information Engineering, Tokyo Metropolitan University

• IMAI Yoshio

  National Research Institute for Metals

• NISHIDA Isao

  National Research Institute for Metals

• SHIOTA Ichiro

  Kogakuin University

• SHINOHARA Yoshikazu

  IMRAM, Tohoku University

• NISHIDA Isao

  Salesian Polytechnic

• OKUMURA Tsugunori

  Department of Electronics and Information Engineering, Tokyo Metropolitan University

• SHIMAZAKI Yoshiki

  LSI Design & Development Center, Asahi Kasei Microsystems Co. Ltd.

• Isoda Y

  Energy Conversion Materials Research Group National Institute For Materials Science

• Kaibe H

  Research Center Komatsu Ltd.

• Kaibe Hiromasa

  Department Of Electrical Engineering Tokyo Metropolitan University

• Okumura Tsugunori

  Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo

• Okumura Tsugunori

  Department Of Electronics And Information Engineering Tokyo Metropolitan University

• Shinohara Yoshikazu

  Imram Tohoku University

関連論文

• PbTe熱電材料の比抵抗の温度履歴
• Al/Al-Si Nano-Composite Graded Coating Prepared by Supersonic Free-Jet PVD
• Ti-Al, Graded Al/AlTi, and Ti-Al-N Coatings Prepared by Supersonic Free-Jet PVD
• Graded TiN Coating by Supersonic Free-Jet PVD Combined with Reactive Plasma
• 傾斜機能構造化によるPb_Sn_xTeの熱電特性向上の可能性
• Scram Characteristics of Control Rods of Pressurized Water Reactor Under Seismic Conditions
• On the Striations in MnSi_ Crystals
• Crystal Growth of MnSi_ by Chemical Transport Method
• Improved Thermoelectric Properties in Structure Controlled Ag-Sb-Te System
• 無添加およびSbI_3添加Bi_2Te_3の気相成長
• Grain Size Effect on Thermoelectric Properties of PbTe Prepared by Spark Plasma Sintering
• 焼結法と溶製法によるIrSb_3の熱電特性
• PbSnTe系化合物半導体溶製材料および焼結材料の熱電特性
• Evaluation of Thermoelectric Properties of Impurity-doped PbTe
• Thermoelectric Properties of p-type Lead Telluride Doped with Silver or Potassium
• p型PbTeの作製と電気的特性
• Size Effects on Photoacoustic Spectra for GaAs Fine Powder
• GaAs Schottky Diodes with Ideality Factor of Unity Fabricated by In Situ Photoelectrochemical Process
• Stabilization of Photoluminescence of Porous Silicon with Nonaqueous Anodic Oxidation
• Characterization of Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy with n-i-n Structure
• Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
• Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
• Carrier-Concentration-Dependent Transport and Thermoelectric Properties of PbTe Doped with Sb_2Te_3
• Composition-Dependent Thermoelectric Properties of (PbTe)_(Bi_2Te_3-Sb_2Te_3)_x (0.1≦x≦5)
• Electrical Transport and Thermoelectric Properties of PbTe Prepared by HPHT
• Role of the EL2 Center on the Formatiorn of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs
• Electrical and Magnetic Properties of Nb_xTi_O_2
• FeSi_2熱電半導体の製法とその熱電特性
• 電子冷却用n型Bi_2(SeTe)_3合金の遠赤外評価
• Scanning Internal-Photoemission Microscopy : New Mapping Technique to Characterize Electrical Inhomogeneity of Metal-Semiconductor Interface
• Improvement in Spatial Resolution of Infrared Scanning Internal-Photoemission Microscope
• Tensile Strength of Carbon/Carbon Composites
• 234 Tensile strength of Carbon/Carbon Composites
• Composition-Dependent Thermoelectric Properties of PbTe Doped with Sb2Te3
• Formation of graded carrier concentration in thermoelectric material PbTe
• Graded Design of Carrier Concentration in Thermoelectric PbTe System by Heat-treatment
• Low-Temperature Fluorination of GaAs Surface by CF_4 Plasma
• Low Barrier Height and Nonuniformity in Al Schottky Contacts on Chemically Etched n-GaAs : Semiconductors and Semiconductor Devices
• Broadband Equivalent Circuit Modeling of Self-Complementary Bow-Tie Antennas Monolithically Integrated with Semiconductors for Terahertz Applications
• Effects of Geometrical Structures on Broadband Characteristics in Finite-Sized On-Chip Self-Complementary Antennas(Session 9B Emerging Devices and Technologies III,AWAD2006)
• Effects of Geometrical Structures on Broadband Characteristics in Finite-Sized On-Chip Self-Complementary Antennas(Session 9B Emerging Devices and Technologies III)
• Effects of Geometrical Structures on Broadband Characteristics in Finite-Sized On-Chip Self-Complementary Antennas
• Dominant Deep Level in Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy
• Contactless Method for Electrical Characterization of Silicon-on-Insulator Materials : Semiconductors
• Deep-Trap Stress Induced Leakage Current Model for Nominal and Weak Oxides
• Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
• Statistical p–n Junction Leakage Model via Trap Level Fluctuation for Refresh-Time-Oriented Dynamic Random Access Memory Design
• Characterization of Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy with n-i-n Structure
• Role of the EL2 Center on the Formation of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs

もっと見る 閉じる

スポンサーリンク