Contactless Method for Electrical Characterization of Silicon-on-Insulator Materials : Semiconductors
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概要
- 論文の詳細を見る
The Kelvin-probe method, in combination with surface photovoltage (SPV) measurements, is applied to the nondestructive electrical characterization of silicon-on-insulator (SOI) materials. It is shown that a simple sandwich-type electrode configuration can be used for the contactless characterization of the SOI layer, when the capacitance between the vibrating electrode and the SOI surface is much smaller than the buried-oxide (BOX) and depletion-1ayer series capacitances. The light-intensity dependence of the SPV gives data equivalent to common current-voltage (I-V) characteristics of diodes. Thus, we call the proposed method the contact less I-V method. Lastly, we demonstrate that uv illumination is effective for applying the contactless I-V method to ultrathin SOI layers such as fully depleted SOI material.
- 社団法人応用物理学会の論文
- 2001-09-15
著者
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Okumura Tsugunori
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Suhara Michihiko
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Suhara Michihiko
Department Of Electrical Engineering Tokyo Metropolitan University
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Eguchi Kazuyoshi
Department Of Electrical Engineering Tokyo Metropolitan University
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En Aimin
Department Of Electrical Engineering Tokyo Metropolitan University
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OKUMURA Tsugunori
Department of Electrical Engineering, Tokyo Metropolitan University
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