Kim Sungsik | Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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概要
- Kim Sungsikの詳細を見る
- 同名の論文著者
- Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japanの論文著者
関連著者
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Kim Sungsik
Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Hori Yujin
Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Hashizume Tamotsu
Graduate School of Electronics and Information Engineering and Research Center for
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Yatabe Zenji
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0814, Japan
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Uesugi Tsutomu
Toyota Central R&d Laboratories Inc.
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Kachi Tetsu
Toyota Central R & D Laboratories Inc.
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Yatabe Zenji
Lab. De Thermodyn. Et Energe. Des Flu. Comp. Umr Total Cnrs 5150 Univ.
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HASHIZUME Tamotsu
Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantu
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Kachi Tetsu
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Iguchi Hiroko
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Ma Wang-Cheng
Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Kikuta Daigo
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Narita Tetsuo
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Kikuta Daigo
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Narita Tetsuo
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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谷田部 然治
北海道大学 大学院情報科学研究科 および 量子集積エレクトロニクス研究センター
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谷田部 然治
北海道大学 量子集積エレクトロニクス研究センター
著作論文
- Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
- Effects of Cl?-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al?O?/AlGaN/GaN Heterostructures
- Effects of Cl_2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al_2O_3/AlGaN/GaN Heterostructures