Arulkumaran S. | Research Center For Nano-device And System Nagoya Institute Of Technology
スポンサーリンク
概要
- ARULKUMARAN S.の詳細を見る
- 同名の論文著者
- Research Center For Nano-device And System Nagoya Institute Of Technologyの論文著者
関連著者
-
Arulkumaran S.
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Egawa T.
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
-
EGAWA T.
Research Center for Nano-Device and System, Nagoya Institute of Technology
-
ISHIKAWA H.
Research Center for Nano-Device and System, Nagoya Institute of Technology
-
Jimbo T.
Research Center for Nano-Device and System, Nagoya Institute of Technology
-
Jimbo T.
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Imanishi A.
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
-
Jimbo T
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Jimbo Takashi
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology:research Ce
-
Egawa T
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Arulkumaran S
Research Center for Nano-Device and System, Nagoya Institute of Technology
-
Imanishi A
Research Center for Nano-Device and System, Nagoya Institute of Technology
-
Ishikawa H
Research Center for Nano-Device and System, Nagoya Institute of Technology
-
Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Jimbo T
Nagoya Inst. Technology Nagoya Jpn
-
Jimbo T
Research Center For Micro-structure Devices Nagoya Institute Of Technology
-
Arulkumaran S
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Imanishi A.
Research Center for Nano-Device and System, Nagoya Institute of Technology
-
Imanishi A
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Ishikawa Hiroyasu
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
著作論文
- Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- Enhancement of breakdown voltage in AlGaN/GaN HEMTs using AlN buffer layer thickness on 4-inch Silicon
- Studies of AlGaN/GaN HEMTs on 4-inch Silicon substrate(Session A6 Compound Semiconductor Devices III)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Studies of AlGaN/GaN HEMTs on 4-inch Silicon substrate(Session A6 Compound Semiconductor Devices III)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- Studies of electron beam evaporated SiO_2/AlGaN/GaN-metal-oxide-semiconductor HEMTs on sapphire substrate
- Studies of electron beam evaporated SiO_2/AlGaN/GaN-metal-oxide-semiconductor HEMTs on sapphire substrate
- Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates