Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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Arulkumaran S.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
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EGAWA T.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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ISHIKAWA H.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Jimbo T.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Egawa T.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo T.
Research Center For Nano-device And System Nagoya Institute Of Technology
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