Studies of AlGaN/GaN HEMTs on 4-inch Silicon substrate(Session A6 Compound Semiconductor Devices III)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
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概要
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We are reporting the fabrication and the performance of AlGaN/GaN HEMTs on 4-inch silicon substrate. The observed results are compared with the results of AlGaN/GaN HEMTs on 4-inch sapphire substrates. The HEMTs on silicon and sapphire exhibited maximum drain current density (I_<Dmax>) Of 378 and 511 mA/mm and maximum extrinsic transconductance (g_<mmax>) of 148 and 198 mS/mm, respectively. The HEMTs on 4-inch sapphire substrate showed about 25 % high values of/I_<Dmax> and g_<mmax>. The observation of increased I_<Dmax> and g_<mmax> for the HEMTs on sapphire is in good agreement with the 2DEG mobility values. To compare the self-heating effects, different gate-width (W_g=15,200 and 400 μm) with 2-μm-gate-length devices was characterized. Small percentage of current reduction with gate width is due to the effect of high thermal conductivity of silicon substrate. About 3 times lower percentage of I_<Dreduc> was observed on Si based devices than the devices on sapphire. Due to the high thermal dissipation effect of Si substrate, high ON-state breakdown voltage (BV_<gd>) of 90V was observed on Si grown AlGaN/GaN HEMTs. The OFF-state BV_<gd> of AlGaN/GaN HEMTs on sapphire (150V) is high when compared with the HEMTs on silicon substrate (106V). The increased value of OFF-state BV_<gd> is due to the effect of thick buffer layer with small gate leakage current. From the experimental results, it is concluded that the OFF-state BV_<gd> was not due to thermal runaway but due to the impact ionization in the channel. Because of the high thermal dissipation effects, silicon is a suitable substrate for low cost high power AlGaN/GaN based electronic device applications.
- 社団法人電子情報通信学会の論文
- 2004-06-24
著者
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Arulkumaran S.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
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EGAWA T.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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ISHIKAWA H.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Egawa T.
Research Center For Nano-device And System Nagoya Institute Of Technology
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