Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
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概要
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We report the effect of passivation on AlGaN/GaN HEMTs using electron beam (EB) evaporated Si_3N_4 and SiO_2 dielectrics. The AlGaN/GaN heterostructure were grown on sapphire substrate using MOCVD method. The Si_3N_4 and SiO_2 dielectrics with a thickness of 100 nm were deposited using EB evaporation. To observe the passivation effect, un-passivated AlGaN/GaN HEMTs were also fabricated and characterized. An increase in the maximum drain current density and extrinsic transconductance of approximately 12 and 18% was observed for EB-Si_3N_4 and 9 and 15% for EB-SiO2 passivated AlGaN/GaN HEMTs, respectively when compared with the un-passivated HEMTs. Both the dielectric passivated HEMTs, the passivation was found to increase the gate leakage current. An increase in the breakdown voltage of approximately 3.4 and 55% was observed on Si_3N_4 and SiO_2 passivated AlGaN/GaN HEMTs when compared with the un-passivated HEMTs. Though the Si_3N_4 passivated HEMTs show better dc characteristics, the breakdown voltage characteristics are not comparable with the HEMTs passivated with SiO_2. Low drain current collapse were observed on un-passivated AlGaN/GaN HEMTs. The drain current collapse has also been observed in the EB evaporated SiO_2 and Si_3N_4, passivated AlGaN/GaN HEMTs.
- 社団法人電子情報通信学会の論文
- 2003-06-24
著者
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Arulkumaran S.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
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EGAWA T.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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ISHIKAWA H.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Imanishi A.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Jimbo T.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Egawa T.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo T.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Imanishi A.
Research Center For Nano-device And System Nagoya Institute Of Technology
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