Enhancement of breakdown voltage in AlGaN/GaN HEMTs using AlN buffer layer thickness on 4-inch Silicon
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Arulkumaran S.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
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EGAWA T.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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ISHIKAWA H.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Egawa T.
Research Center For Nano-device And System Nagoya Institute Of Technology
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