Studies of electron beam evaporated SiO_2/AlGaN/GaN-metal-oxide-semiconductor HEMTs on sapphire substrate
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概要
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The metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) have been demonstrated on sapphire substrates, and the dc characteristics of the fabricated devices were examined. The electron beam (EB) evaporated SiO_2 oxide layers were used as a gate-insulator. The fabricated MOS-HEMTs have exhibited superior dc characteristics when compared with the conventional AlGaN/GaN HEMTs. The MOS-HEMTs could operate at positive gate-biases as high as +4.0 V. The MOS-HEMTs exhibited high drain current at 856 mA/mm. The extrinsic transconductance of 144 mS/mm has been found in 1.7 μm-gate-length EB-SiO_2 MOS-HEMTs. The gate leakage current was three orders of magnitude smaller than that of the conventional AlGaN/GaN HEMTs. The stable device operations at high gate voltages indicate that the trap density at the interface between the EB-SiO_2 and AlGaN/GaN heterostructure will be low.
- 社団法人電子情報通信学会の論文
- 2002-06-25
著者
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Arulkumaran S.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
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EGAWA T.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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ISHIKAWA H.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Jimbo T.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Egawa T.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo T.
Research Center For Nano-device And System Nagoya Institute Of Technology
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