Inoue K | Technol. Res. Inst. Osaka Prefecture Osaka Jpn

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著作論文

22pYP-9 ハイパーラマン散乱によるシリカガラスのボゾンピークの観測
Magnetic-Field-Induced Martensitic Transformation in Ni_2MnGa-Based Alloys : Condensed Matter: Structure, etc.
Hollow Optical Waveguide for Temperature-Insensitive Photonic Integrated Circuits : Optics and Quantum Electronics
25aRA-10 二次元フォトニック結晶における位相整合第二高調波発生II : 後方、前方散乱配置での比較
25aRA-10 二次元フォトニック結晶における位相整合第二高調波発生II : 後方、前方散乱配置での比較
Photoluminescence and Lasing Characteristics of GaInNAs Quantum Wells Using GaInAs Intermediate Layers
Nitrogen Composition and Growth Temperature Dependence of Growth Characteristics for Self-Assembled GaInNAs/GaAs Quantum Dots by Chemical Beam Epitaxy
1.4μm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy : Short Note
Temperature Characteristics of λ= 1.3μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
OS4(4)-16(OS04W0182) Neutron Diffraction Study of Residual Stress in the Induction Hardened S45C Round Bar
Neutron Diffraction Study of Shape Memory Alloys (Proceedings of the 1st International Symposium on Advanced Science Research(ASR-2000), Advances in Neutron Scattering Research)
Neutron Diffraction Measurement and Finite Element Method Calculation of Residual Stress of a Heat Treated Steel Pipe
GaInAsP Microcylinder (Microdisk) Injection Laser With AlInAs (O_x) Claddings : Optics and quantum Electronics
光の放射圧と自己組織化を利用した微粒子配列
Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
Lasing Characteristics of 1.2 μm Highly Strained GaInAs/GaAs Quantum Well Lasers
Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs
Inclusion of Strain Effect in Miscibility Gap Calculations for III-V Semiconductors
Tunnel Junction for Long-Wavelength Vertical-Cavity Surface-Emitting Lasers : Optics and Quantum Electronics
フォトニック結晶スラブ導波路における光と物質の非線形相互作用
TiO2結晶による広波長領域にわたる多段コヒーレント・アンチストークス・ラマン光の発生現象
フォトニック結晶による光の場の制御--光集積回路への応用
フォトニック結晶の概観 (特集フォトニック結晶)
フォトニック結晶による光制御の最新技術
フォトニック結晶による光の場の制御
29pYT-1 ハイパーラマン散乱によるガラスのボゾンピークの観測とその起源
29pYT-1 ハイパーラマン散乱によるガラスのボゾンピークの観測とその起源
High-Power CW Operation of GalnAsP/InP Superlumlnescent Light-Emitting Diode with Tapered Active Region : Optics and Quantum Electronics
Measurement of Plasma Density for Control of Etching Profile in Inductively Coupled Plasma Etching of InP
Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl_2 Inductively Coupled Plasma
Reflection Induced Voltage Change of Surface Emitting Laser for Optical Probing
Monolothic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
Noise Suppression and Intensity Modulation in Gain-Saturated Semiconductor Optical Amplifiers and Its Application to Spectrum-Sliced Light Sources
Composition Dependence of Thermal Annealing Effect on 1.3 μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy : Semiconductors
1.12μm PolariZation Controlled Highly Strained GalnAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition : Optics and Quantum Electronics
Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311) B(Special Issue on Optical Interconnects/Optical Signal Processing)
1.15 μm Lasing Operation of Highly Strained GaInAs/GaAs on GaAs (311)B Substrate with High Characteristic Temperature (T_0 = 210 K)
Proposal of Optically Pumped Tunable Surface Emitting Laser : Optics and Quantum Electronics

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