フォトニック結晶による光の場の制御
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概要
- 論文の詳細を見る
- 日本表面科学会の論文
- 2001-11-10
著者
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井上 久遠
千歳科学技術大学光科学部物質光科学科
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井上 久遠
千歳科学技術大学:豊田理化学研究所
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Inoue K
Technol. Res. Inst. Osaka Prefecture Osaka Jpn
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Iga K
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Iga K
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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- 25aN-13 スラブ型半導体2次元フォトニック結晶の特性
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- Magnetic-Field-Induced Martensitic Transformation in Ni_2MnGa-Based Alloys : Condensed Matter: Structure, etc.
- 12aXA-9 KTaO_3 におけるフェムト秒近赤外四光波混合(誘電体の光制御・光学応答, 領域 5)
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- Nitrogen Composition and Growth Temperature Dependence of Growth Characteristics for Self-Assembled GaInNAs/GaAs Quantum Dots by Chemical Beam Epitaxy
- 1.4μm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy : Short Note
- Temperature Characteristics of λ= 1.3μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
- OS4(4)-16(OS04W0182) Neutron Diffraction Study of Residual Stress in the Induction Hardened S45C Round Bar
- Neutron Diffraction Study of Shape Memory Alloys (Proceedings of the 1st International Symposium on Advanced Science Research(ASR-2000), Advances in Neutron Scattering Research)
- Neutron Diffraction Measurement and Finite Element Method Calculation of Residual Stress of a Heat Treated Steel Pipe
- GaInAsP Microcylinder (Microdisk) Injection Laser With AlInAs (O_x) Claddings : Optics and quantum Electronics
- 光の放射圧と自己組織化を利用した微粒子配列
- Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- Lasing Characteristics of 1.2 μm Highly Strained GaInAs/GaAs Quantum Well Lasers
- Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs
- Inclusion of Strain Effect in Miscibility Gap Calculations for III-V Semiconductors
- Tunnel Junction for Long-Wavelength Vertical-Cavity Surface-Emitting Lasers : Optics and Quantum Electronics
- Evaluation of Numerical Aperture and Focusing Characteristics of Planar Microlens for Optical Interconnects : Optics and Quantum Electronics
- Parallel Optical-Transmission Module Using Vertical-Cavity Surface-Emitting Laser Array and Micro-Optical Bench (MOB) : Optics and Quantum Electronics
- Collimation Characteristics of Planar Microlens for Parallel Optical Interconnect
- Fundamental Study of Parallel Moduling Scheme Based on a Micro-Optical Bench and Collimating Planar Microlenses
- A Bidirectional Optical Module Based on Stacked Planar Optical Circuit
- Two-Dimensional Alignment-Free Optical Interconnect Using Micro Optical Bench Scheme
- An Optical Network Unit (ONU) Chip Based on Stacked Planar Optics
- A Microoptic Network Unit Using Planar Microlens Array
- Optical Dispersion Characteristics of Planar Microlenses
- Self-Aligning Optical Interconnect Scheme Using Put-in Microconnector (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers
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- GaInAs/AlGaInAs Semiconductor Lasers on InP Substrate with AlAs Oxide Current Confinement
- Composition Dependence of Thermal Annealing Effect on 1.3 μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy : Semiconductors
- 1.12μm PolariZation Controlled Highly Strained GalnAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition : Optics and Quantum Electronics
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311) B(Special Issue on Optical Interconnects/Optical Signal Processing)
- 1.15 μm Lasing Operation of Highly Strained GaInAs/GaAs on GaAs (311)B Substrate with High Characteristic Temperature (T_0 = 210 K)
- Proposal of Optically Pumped Tunable Surface Emitting Laser : Optics and Quantum Electronics
- Highly Stable Single Polarization Operation of GaInAs/GaAs Vertical-Cavity Surface-Emitting Laser on GaAs(311)B Substrate under High-Speed Modulation