$p$-Type Doping Characteristics of GaInNAs:Be Grown by Solid Source Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
We investigated the doping and electrical characteristics of $p$-type GaInNAs for use in a $p$-contact layer and in the $p$-distributed Bragg reflectors ($ p$-DBRs) of surface emitting lasers. Beryllium doping was applied to GaInNAs grown by solid source molecular beam epitaxy with the nitrogen radical. The doping efficiency for the lattice-matched GaInNAs is similar to that of the GaAs, and a slight deterioration in hole mobility indicates the alloy scattering of the GaInNAs.
- Japan Society of Applied Physicsの論文
- 2004-04-01
著者
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Ohta Masataka
Microsystem Research Center P & I Lab. Tokyo Institute Of Technology
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Makino Shigeki
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Matsui Yasutaka
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Ohta Masataka
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Matsuura Tetsuya
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Makino Shigeki
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Miyamoto Tomoyuki
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Matsui Yasutaka
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Matsuura Tetsuya
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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