GaInNAs Intermediate Layer for Improvement of Lasing Characteristics of GaInNAs Quantum Well Lasers
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概要
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We report on GaInNAs intermediate layer (IML) structures for improving the lasing characteristics of GaInNAs quantum well (QW) lasers. Either lattice-matched or strained (${\sim}0.65$%) GaInNAs IMLs were inserted at GaInNAs/GaAs interfaces. The elongation of the emission wavelength of IML QW structure was observed while maintaining the photoluminescence (PL) emission efficiency in comparison with that of the GaAs barrier QW structure. The elongation of the lasing wavelength of GaInNAs QW lasers without a threshold penalty was also demonstrated by employing a GaInNAs IML. The IML QW exhibited a reduction in the amount of the wavelength blue shift due to postgrowth thermal annealing.
- 2004-04-01
著者
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Kawaguchi Masao
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Saitoh Atsushi
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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