Characterization of Single-Wavelength Optically Pumped GaInAsP/InP Vertical-Cavity Surface-Emitting Lasers with Dielectric Mirrors
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概要
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In this study, the lasing characteristics of optically pumped vertical-cavity surface-emitting lasers (VCSELs) with dielectric mirrors, which are a fundamental structure of our proposed tunable VCSELs, were investigated. Firstly, the design and fabrication of single-wavelength GaInAsP/InP VCSELs without a tuning mechanism are described. The GaInAsP nine-quantum-well (QW) active region and pump light-absorption region were grown on an InP substrate by metal-organic chemical vapor deposition (MOCVD). SiO2/TiO2 or a-Si/SiO2 dielectric distributed Bragg reflectors (DBRs) were deposited on both sides of a thin cavity formed by etching of the InP substrate. Continuous-wave operation was observed at room temperature. The lowest threshold pump power was 1.8 mW for a 0.98 μm pump light, which corresponds to an equivalent threshold current density of 710 A/cm2. The thermal and polarization characteristics of the fabricated devices are also discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-08-15
著者
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Onishi Yutaka
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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KINOSHITA Junji
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Onishi Yutaka
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Miyamoto Tomoyuki
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Kinoshita Junji
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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