Short-Period GaInAs/InP Superlattice for Distributed Bragg Reflector
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概要
- 論文の詳細を見る
A short-period Ga0.47In0.53As/InP superlattice structure was investigated as a substitute for GaInAsP alloy of an InP-based multilayer distributed Bragg reflector (DBR). A superlattice structure grown by metalorganic chemical vapor deposition was characterized by X-ray diffraction and room temperature photoluminescence, and the measured properties were in good agreement with designed one. A superlattice DBR showed a similar reflectivity spectrum to an alloy DBR for 1.5 μm range without deterioration of the superlattice structure. The result indicates potentiality of application to long-wavelength surface-emitting lasers.
- Japan Society of Applied Physicsの論文
- 2006-07-25
著者
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Ishida Syuutarou
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Miyamoto Tomoyuki
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Ishida Syuutarou
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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