Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers
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概要
- 論文の詳細を見る
Lasing characteristics of molecular beam epitaxy (MBE) grown GaInAs/AlGaAs single quantum well (SQW) lasers with a double-barrier tunnel injection structure are investigated. The $I$–$L$ characteristics and threshold current density are strongly influenced by the tunnel injection structure, such as the thickness of the tunnel injection and barrier layers, and their barrier height. Large kinks are observed in the $I$–$L$ characteristics, which are related with the quantized level in the tunnel injection structure. A tunnel injection laser showed a lower threshold current density and a higher characteristic temperature of 164 K than a reference conventional SQW laser.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-02-25
著者
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Ohta Masataka
Microsystem Research Center P & I Lab. Tokyo Institute Of Technology
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Iwasaki Takahiro
Microsystem Research Center P & I Lab. Tokyo Institute Of Technology
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Furuhata Tatsuya
Microsystem Research Center P & I Lab. Tokyo Institute Of Technology
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Kashihara Yoshihiro
Microsystem Research Center P & I Lab. Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Matsuura Tetsuya
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Miyamoto Tomoyuki
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Ohta Masataka
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Matsuura Tetsuya
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Furuhata Tatsuya
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Kashihara Yoshihiro
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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