1.3 μm AlGaInAs MQW Inner-Stripe Laser Diodes (IEICE Trans., Electron., Vol. E86-C, No. 5, Joint Special Issue on Recent Progress in Optoelectronics and Communications)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人電子情報通信学会の論文
- 2003-05-01
著者
-
Arakawa S
Yokohama R&d Laboratories Furukawa Electric Co. Ltd.
-
Kasukawa A
Yokohama R&d Laboratories Furukawa Electric Co. Ltd.
-
Kasukawa Akihiko
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
-
NAKASAKI Ryusuke
Yokohama R & D Laboratories, Furukawa Electric Co., Ltd.
-
ITO Mitsumasa
Yokohama R & D Laboratories, Furukawa Electric Co., Ltd.
-
ARAKAWA Satoshi
Yokohama R & D Laboratories, Furukawa Electric Co., Ltd.
-
Ito Mitsumasa
Yokohama R&d Laboratories Furukawa Electric Co. Ltd.
-
Nakasaki Ryusuke
Yokohama R&d Laboratories Furukawa Electric Co. Ltd.
関連論文
- High Power Laser Diodes for EDFA Pumping
- 1.3μm AlGaInAs MQW Inner-Stripe Laser Diodes(Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- 1.3 μm AlGaInAs MQW Inner-Stripe Laser Diodes (IEICE Trans., Electron., Vol. E86-C, No. 5, Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Transverse Mode Control and Reduction of Thermal Resistance in 850nm Oxide Confined VCSELs(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
- Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers
- High Uniform Waveguide Photodiodes Fabricated on a 2-inch InP Wafer with Low Darkcurrent and High Responsivity
- Strained Layer Multiquantum Barriers with Improved Carrier Injection and Confinement
- InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers
- GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode
- High Quantum Efficiency, High Output Power 1.3 μm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes
- In-Situ Etching of Semiconductor with CBr_4 in Metalorganic Chemical Vapor Deposition (MOCVD) Reactor