In-Situ Etching of Semiconductor with CBr_4 in Metalorganic Chemical Vapor Deposition (MOCVD) Reactor

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-02-28

著者

• Kasukawa Akihiko

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd

• ARAKAWA Satoshi

  Yokohama R & D Laboratories, Furukawa Electric Co., Ltd.

• ITOH Mitsumasa

  Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd

• Itoh M

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd

• Itoh Mitsumasa

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd

• Arakawa Satoshi

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd

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• Transverse Mode Control and Reduction of Thermal Resistance in 850nm Oxide Confined VCSELs(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
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• InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers
• High Quantum Efficiency, High Output Power 1.3 μm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes
• In-Situ Etching of Semiconductor with CBr_4 in Metalorganic Chemical Vapor Deposition (MOCVD) Reactor

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