High Uniform Waveguide Photodiodes Fabricated on a 2-inch InP Wafer with Low Darkcurrent and High Responsivity
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Kasukawa A
Yokohama R&d Laboratories Furukawa Electric Co. Ltd.
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Kasukawa Akihiko
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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IWAI Norihiro
Yokohama Research and Development Laboratories, Furukawa Electric Co.Ltd.
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FUNABASHI Masaki
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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NISHIKATA Kazuaki
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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HIRAIWA Koji
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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YAMANAKA Nobumitsu
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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Iwai N
Yokohama Research And Development Laboratories Furukawa Electric Co.ltd.
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Iwai Norihiro
Yokohama R & D Lab. The Furukawa Electric Co. Ltd.
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Hiraiwa Koji
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Funabashi Masaki
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Nishikata Kazuaki
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Yamanaka N
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
関連論文
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- Transverse Mode Control and Reduction of Thermal Resistance in 850nm Oxide Confined VCSELs(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
- Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers
- High Uniform Waveguide Photodiodes Fabricated on a 2-inch InP Wafer with Low Darkcurrent and High Responsivity
- Strained Layer Multiquantum Barriers with Improved Carrier Injection and Confinement
- InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers
- GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode
- High Quantum Efficiency, High Output Power 1.3 μm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes
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