Kasukawa A | Yokohama R&d Laboratories Furukawa Electric Co. Ltd.

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著作論文

1.3μm AlGaInAs MQW Inner-Stripe Laser Diodes(Joint Special Issue on Recent Progress in Optoelectronics and Communications)
1.3 μm AlGaInAs MQW Inner-Stripe Laser Diodes (IEICE Trans., Electron., Vol. E86-C, No. 5, Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Transverse Mode Control and Reduction of Thermal Resistance in 850nm Oxide Confined VCSELs(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers
High Uniform Waveguide Photodiodes Fabricated on a 2-inch InP Wafer with Low Darkcurrent and High Responsivity
Strained Layer Multiquantum Barriers with Improved Carrier Injection and Confinement
InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers
GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode
High Quantum Efficiency, High Output Power 1.3 μm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes

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