GalnAsP/InP Square Buried-Heterostructure Surface-Emitting Lasers Regrown by MOCVD

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概要

• 論文の詳細を見る

• Mesa structures have been investigated to optimize a buried-heterostructure (BH) for a GaInAsP/InP surface-emitting (SE) laser regrown by metalorganic chemical vapor deposition (MOCVD), and it has been found that a square mesa top pattern of which the sides are at an angle of 45° to the lt011gt orientation is suitable. A 1.3-μm GaInAsP/InP square buried heterostructure (SBH) SE laser with this mesa structure has been demonstrated and low-threshold CW oscillation (threshold current I_ltthgt=0.45 mA) at 77 K and low-threshold room-temperature pulsed oscillation (I_ltthgt=12 mA) have been obtained.

• 社団法人電子情報通信学会の論文
• 1995-09-25

著者

• Uchiyama S

  Ntt Microsystem Integration Lab. Atsugi‐shi Jpn

• Kashiwa S

  Optoelectronics Technology Research Corporation C

• Kashiwa Susumu

  O Yokohama Rampd Laboratories The Furukawa Electric Co. Ltd.

• Uchiyama S

  Furukawa Electric Co. Ltd. Yokohama Jpn

• Uchiyama Seiji

  RWCP (Real World Computing Partnership) Optoelectronics Furukawa Laboratory, c

• Kashiwa Susumu

  RWCP (Real World Computing Partnership) Optoelectronics Furukawa Laboratory, c/o Yokohama RampD Labo

関連論文

• GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode
• High Quantum Efficiency, High Output Power 1.3 μm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes
• GalnAsP/InP Square Buried-Heterostructure Surface-Emitting Lasers Regrown by MOCVD
• Structure Analysis and Hydrogen Bond Character of K_3H (SO_4)_2

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