InP Grown on Si Substrates with GaP Buffer Layers by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• InP epilayers are grown on Si substrates with buffer layers of InAs, GaAs, or GaP. The buffer layers are grown on Si below their crystallizing temperatures, and then InP epilayers are grown on top of them using a conventional two-step growth method. GaP is the best of the three buffer layer materials and the optimum thickness is about 17 nm. The InP epilayers grown on Si with GaP buffer layers have higher crystalline quality than either those grown directly on Si or those grown with GaAs intermediate layers. The full width at half maximum of the (400) reflection obtained from annealed 7.8-$\mu$m-thick InP epilayer is as small as 240 arcseconds and the etch pit density is $3.0\times 10^{7}$ cm-2

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-08-20

著者

• Ohmachi Yoshiro

  Ntt Applied Electronics Laboratories

• KOHAMA Yoshitaka

  NTT Applied Electronics Laboratories

• Kadota Yoshiaki

  Ntt Applied Electronics Laboratories

• Kohama Yoshitaka

  NTT Applied Electronics Laboratories, 3-9-11, Midori-cho, Musashino-shi, Tokyo 180

関連論文

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• Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
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• Initial Stages of Epitaxial Growth of GaP on Si with AsH_3 Preflow
• Growth and Characterization of GaAs layers Grown on Ge/Si Substrates by Metalorganic Chemical Vapor Deposition : Condensed matter
• Critical Thickness for the Si_Ge_x/Si Heterostructure
• Electron-Beam-Induced Current Observation of Misfit Dislocations at Si_Ge_x/Si Interfaces
• Depth-Resolved Cathodoluminescence in GaAs Epilayers Grown on Si Substrates
• InP Grown on Si Substrates with GaP Buffer Layers by Metalorganic Chemical Vapor Deposition

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