Electron-Beam-Induced Current Observation of Misfit Dislocations at Si_<1-x>Ge_x/Si Interfaces

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概要

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• The electron-beam-induced current (EBIC) method has been applied to observing the misfit dislocations at Si_<1-x>Ge_x/Si interfaces in order to determine directly the dependence of critical layer thickness h_c on mole fraction X. The EBIC images show square-grid patterns that agree with a chemical etched pattern. The typical dislocation image width obtained by EBIC is about 0.5 μm, which approximately agrees with the resolution introduced from the lateral-dose function. It has been found that the dependence of h_c on X judged from whether or not the misfit dislocations generate cannot be explained by the theory presented by People and Bean.

• 社団法人応用物理学会の論文
• 1987-12-20

著者

• Fukuda Yukio

  Ntt Applied Electronics Laboratories

• KOHAMA Yoshitaka

  NTT Applied Electronics Laboratories

• WATANABE Yoshio

  NTT Applied Electronics Laboratories

• Watanabe Yoshio

  Ntt Advanced Technology Corporation

関連論文

• Generation of Misfit Dislocations in Si_Ge_x/Si Heterostructures
• Dislocation Reduction in MBE-Grown Ge on Si (001) by in situ Thermal Annealing : Condensed Matter
• Misfit Dislocation Structures at MBE-Grown Si_Ge_x/Si Interfaces : Surfaces, Interfaces and Films
• Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
• Material Quality in GaAs-on-Si Grown by Metalorganic Molecular Beam Epitaxy
• Domain Structures of As-Adsorbed Si(100) Surface and GaAs Overlayer
• Growth of GaAs on Si Substrates by Metalorganic MBE Using Triethylgallium and Arsenic
• RHEED Intensity Observation during TEGa-As_4 Alternate Supply Growth of GaAs : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
• Multi-quantum structures of GaAs/AlGaAs Free-standing Nanowires
• Nanoholes in InP and C60 Layers on GaAs Substrates by Using AlGaAs Nanowire Templates
• Initial Stages of Epitaxial Growth of GaP on Si with AsH_3 Preflow
• Growth and Characterization of GaAs layers Grown on Ge/Si Substrates by Metalorganic Chemical Vapor Deposition : Condensed matter
• Critical Thickness for the Si_Ge_x/Si Heterostructure
• Electron-Beam-Induced Current Observation of Misfit Dislocations at Si_Ge_x/Si Interfaces
• Depth-Resolved Cathodoluminescence in GaAs Epilayers Grown on Si Substrates
• Multi-Quantum Structures of GaAs/AlGaAs Free-Standing Nanowires
• InP Grown on Si Substrates with GaP Buffer Layers by Metalorganic Chemical Vapor Deposition

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